Samsung 18 nm DRAM Analysis

Posted: December 15, 2017

In April 2017, Samsung became the world’s first manufacturer to mass produce 10 nm-class DRAM. In June 2017, TechInsights published a blog based on our first learnings on this innovation that detailed a memory density increase of 32.8% when comparing 8Gb DRAM 18 nm and 20 nm die.

Samsung K3UH5H50MM-NGCJ (LPDDR4X Mobile SDRAM)

Samsung K3UH5H50MM-NGCJ (LPDDR4X Mobile SDRAM)

Samsung K3UH5H50MM-NGCJ (LPDDR4X Mobile SDRAM)

  • Found as PoPin S8 and S8+, Google Pixel 2 (G011A) and others
  • K4F8E164HM die extracted from the Samsung Galaxy S8 model SM-G950W
  • 366 FBGA
  • 32Gb
K4A8G085WC-BCRC (DDR4)

K4A8G085WC-BCRC (DDR4)

K4A8G085WC-BCRC (DDR4)

  • K4A8G085WC die extracted from the Samsung M471A2K43CB1-CRC SO-DIMM
  • 78 FBGA
  • 8GB

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