Samsung 1a 16Gb LPDDR5X DRAM Transistor
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This report presents Key DC electrical characteristics for NMOS and PMOS transistors located in the word line drivers and sense amplifiers regions of the Samsung K4L6E165YC die found inside the Samsung K3KL3L30CM-BGCT LPDDR5X SDRAM package. The Samsung K3KL3L30CM-BGCT package was extracted from the Samsung Galaxy S23 Ultra (SM-S918U) smartphone.
The Samsung's Galaxy S23 Ultra, model SM-S918U is an Android smartphone introduced in February of 2023. The phone measures 163.4 ×78.1 ×8.9 mm and weighs 234g. The Samsung S23 Ultra is powered by the Qualcomm SM8550-AC Snapdragon 8 Gen 2 Octa-core SoC and comes with 8 GB of LPDDR5X SDRAM.
The Samsung K3KL3L30CM-BGCT 8 GB LPDDR5X SDRAMis a multi-chip package (MCP) with 496-ball grid array (BGA) featuring four K4L6E165YC 16 Gb LPDDR5X SDRAM dies. The package measures 14.0 mm ×12.4 mm ×0.48 mm,
The K4L6E165YC die was manufactured by Samsung using its 1a generation stacked DRAM CMOS process, employing buried word line (WL) cell array transistors (BCAT) with metal gates. The K4L6E165YC die incorporates five metal layers, one aluminum (Al), three copper (Cu), one tungsten (W) and an aluminum (Al) redistribution layer (RDL) used for routing and bonding. The K4L6E165YC die measures 7.50 mm ×6.26 mm (46.95 mm2) as measured from the die seals, or 7.55 mm ×6.31 mm (47.64 mm2) for the full die.
Key DC electrical measurements of the word line drivers and sense amplifiers transistors for the Samsung K4L6E165YC die were performed in a scanning electron microscopy (SEM) based environment using a Kleindiek Nanotechnik prober and a Keithley 4200 semiconductor characterization system. The transistors were measured at 85º C.
