Samsung SF3 (2nd Gen 3nm GAA) in Exynos W1000 Processor Confirmed

Initial SEM results for the Exynos W1000 processor, now available on the TechInsights platform, confirm Samsung’s successful implementation of 2nd generation 3nm GAA technology. This advancement marks a significant milestone in semiconductor technology, showcasing Samsung’s ability to push the boundaries of chip design and manufacturing.

SEM cross-section images reveal nanosheets at the gate level, providing clear evidence of Samsung’s SF3 technology in action. The gate-level die photograph further illustrates the processor's core components: a high-performance single-core Arm Cortex-A78 CPU, a high-efficiency quad-core Arm Cortex-A55 CPU, and a dual-core Arm Mali-G68 GPU. These components confirm the robust design and integration capabilities of the Exynos W1000 processor, highlighting Samsung's expertise in developing advanced SoCs.

Our ongoing analysis will deliver more insights on the SF3 node, including detailed measurements of critical dimensions. Samsung's achievement as the first to produce gate-all-around technology in a consumer product, albeit in a lower-volume smartwatch, sets the stage for potential expansion into higher-volume devices. The critical question remains: can Samsung optimize this process for their next flagship smartphone, the Galaxy S25+, and meet the stringent demands of high-volume manufacturing? Stay tuned as we continue to uncover the capabilities and future implications of Samsung's groundbreaking technology.