STM STH60N099DM9 600 V, 76 mΩ MDmesh DM9 Automotive SJ-MOSFET Power Essentials
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As STMicroelectronics’ first automotive device in the new STPOWER MDmesh DM9 AG series, the STH60N099DM9-2AG, announced on March 11, 2024, features an N-channel 600 V Si SJ-MOSFET die which provides a maximum continuous source/drain (S/D) current of 27 A (at T = 25 °C) and a 76 mΩ typical source/drain (S/D) ON-resistance (RDS(ON)) at 10 V VGS bias. The detailed process features of SJ-MOSFET die has been analyzed in this report and compared with selected SJ-MOSFETs in different voltage classes.
