STM STWA60N028T 600 V Deep Trench STMesh Super-Junction MOSFET Power Essentials

STMicroelectronics STWA60N028T is a 600 V N‑channel MOSFET using STMESH trench technology, delivering low resistance and high‑efficiency switching.

STMicroelectronics STWA60N028T is a 600 V N-channel power MOSFET designed for high-efficiency switching applications, featuring low on-resistance (22 mΩ typical – 28 mΩ maximum at VGS = 10 V) and a maximum drain current of 84 A (at 25 °C) [1]. The device is built using the STMESH™ trench technology, which is a proprietary high-voltage power MOSFET technology developed by STMicroelectronics. The approach is based on a super-junction (SJ) structure, where the MOSFET’s drift region is formed by alternating vertical P-type/N-type doped columns (instead of a simple uniformly doped region). Applications of the device include microinverters, power supplies, and converters.