Vishay MXP120A080FW MaxSiC 1200 V SiC MOSFET Power Essentials

Power Essentials report on MXP120A080FW from Vishay highlights its fast switching performance and transistor outline 247AD, 3-lead (TO-247AD 3L) package.

The MXP120A080FW from Vishay is a 1200 V N-channel silicon carbide (SiC) MOSFET from the MaxSiC® family, engineered for high-efficiency, high-voltage power conversion. According to the datasheet, it features a typical 80 mΩ RDS(ON) at VGS = 20 V and 25°C, supports 29 A continuous drain current at 25°C (18 A at 100°C), and delivers fast switching performance enabled by a total gate charge of approximately 47.3 nC and low capacitances. Housed in a transistor outline 247AD, 3-lead (TO-247AD 3L) package, the MXP120A080FW is optimized for applications such as industrial power supplies, chargers, and DC-DC converters where high voltage capability, efficiency, and thermal robustness are critical.