This report presents a Power Essentials (PEF) analysis of Toshiba TW070J120B silicon carbide (SiC) based power FET. The TW070J120B is a 1200 V N-channel enhancement mode MOSFET with an integrated Schottky barrier diode (SBD). The complete PEF deliverable includes a one-page summary of observed device metrics and salient features, supported by the following unannotated image folders:

• Package optical photographs, package X-ray images, die photographs, optical photographs of die features
• Scanning electron microscopy (SEM) plan-view images of the device delayered to the gate level
• Exploratory cross-sectional plan-view SEM images of the device structure
• Detailed cross-sectional scanning microwave impedance microscopy (sMIM) analysis of the dopant structures
• The image set for a standard PEF project is derived from a delayered sample for SEM planar analysis, a single plane of cross-sectioning for SEM structural analysis, and a single sMIM sample for the detailed structural analysis. Value add information such as additional planes of cross-sectioning, may be included on a case-by-case basis
  

The Power Essentials deliverable provides basic competitive benchmarking information and enables cost-effective tracking of multiple competitors’ technology.