Microsemi MSC025SMA120B 1200V SiC Power Floorplan Analysis

Product Code

PFR-2101-802

Release Date

15/03/2021

Availability

In Creation

Product Item Code

MSZ-MSC025SMA120B

Device Manufacturer

Microsemi

Device Type

SiC Power FET

Subscription

Power Semiconductor

Channel

Power Semiconductor - Silicon Carbide (SiC) Floorplan

Microsemi MSC025SMA120B 1200V SiC Power Floorplan Analysis

This report presents an analysis of the Microsemi MSC025SMA120B power silicon carbide (SiC) based MOSFET. The MSC025SMA120B is a 1200 V, N-channel enhancement mode MOSFET.

Related Analysis	Manufacturer	Analysis Type	Subscription Channel
Infineon IM828-XCC 1200 V CoolSiC IPM Power Floorplan Analysis	Infineon	Packaging	Power Semiconductor - Silicon Carbide (SiC) Floorplan
UnitedSiC UJ4C075018K4S 750 V, 18 mΩ Gen. 4 SiC FET Power Essentials	UnitedSiC	Process	Power Semiconductor - Power Essentials
UnitedSiC 750 V 18 mΩ Gen 4 SiC FET Power Floorplan Analysis	UnitedSiC	Process	Power Semiconductor - Silicon Carbide (SiC) Floorplan
Wolfspeed/Cree C3M0015065D Gen3 650V SiC Power Essentials	Cree	Process	Power Semiconductor - Power Essentials
ExaGaN EXA06C065LDS0 650V GaN Power Floorplan Analysis	ExaGaN	Process	Power Semiconductor - Gallium Nitride (GaN) Floorplan
GeneSiC G2R120MT33J 3300V 120 mΩ SiC MOSFET Power Floorplan Analysis	GeneSiC	Process	Power Semiconductor - Silicon Carbide (SiC) Floorplan
Efficient Power Conversion EPC2218 100 V GaN Power Floorplan Analysis	EFFICIENT POWER CONVERSION	Floorplan	Power Semiconductor - Gallium Nitride (GaN) Floorplan
STMicroelectronics MASTERGAN1 Power Package Analysis	STMicroelectronics	Packaging	Power Semiconductor - Package Analysis
Microsemi MSC025SMA120B 1200V SiC Power Floorplan Analysis	Microsemi	Process	Power Semiconductor - Silicon Carbide (SiC) Floorplan
Toshiba TW070J120B 1200 V Silicon Carbide (SiC) Power Essentials	Toshiba	Process	Power Semiconductor - Power Essentials