This report presents a Digital Functional Analysis of the Qualcomm HG11-P5219-1 die found inside the Qualcomm MSM8998 Snapdragon 835 PoP component. This report contains the following detailed information:

• Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
• Scanning electron microscopy (SEM) plan-view micrographs showing the layout of the die at the levels including, fin/STI, gate, contacts, and minimum pitch metals
• Measurements of horizontal dimensions of some of the major layout features, particularly the pitch and track height of standard cells
• Plan-view optical micrograph of the die delayered to the gate level
• Identification of major functional blocks on a gate level die photograph
• Table of functional block sizes and percentage die utilization
• High-resolution top metal and gate level die photographs delivered in the ICWorks Browser
• Cost of die and tested packaged die, based on the manufacturing cost analysis of the observed process